N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3

RS noliktavas nr.: 200-6813Ražotājs: VishayRažotāja kods: SIHJ690N60E-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.5 A, 5.6 A

Maximum Drain Source Voltage

650 V

Package Type

PowerPAK SO-8L

Pin Count

5

Maximum Drain Source Resistance

0.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Series

E

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,15

Katrs (Rulli ir 3000) (bez PVN)

€ 1,392

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3

€ 1,15

Katrs (Rulli ir 3000) (bez PVN)

€ 1,392

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L Vishay SIHJ690N60E-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.5 A, 5.6 A

Maximum Drain Source Voltage

650 V

Package Type

PowerPAK SO-8L

Pin Count

5

Maximum Drain Source Resistance

0.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Series

E

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more