N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3

RS noliktavas nr.: 210-4970Ražotājs: VishayRažotāja kods: SIHB15N80AE-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.304 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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€ 5,50

€ 1,10 Katrs (Paka ir 5) (bez PVN)

€ 6,66

€ 1,331 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3
Izvēlēties iepakojuma veidu

€ 5,50

€ 1,10 Katrs (Paka ir 5) (bez PVN)

€ 6,66

€ 1,331 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.304 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more