Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Series
U-MOSVIII-H
Width
4.45mm
Package Type
TO-220
Length
10.16mm
Maximum Power Dissipation
168 W
Height
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Brand
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Produkta apraksts
11mm, 3.5 Digit Display
LCD 4 to 20mA Current Loop Powered Meters
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,825
Katrs (Paka ir 10) (bez PVN)
€ 0,998
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,825
Katrs (Paka ir 10) (bez PVN)
€ 0,998
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,825 | € 8,25 |
50 - 90 | € 0,742 | € 7,42 |
100+ | € 0,691 | € 6,91 |
Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Series
U-MOSVIII-H
Width
4.45mm
Package Type
TO-220
Length
10.16mm
Maximum Power Dissipation
168 W
Height
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Brand
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Produkta apraksts