N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

RS noliktavas nr.: 125-0563Ražotājs: ToshibaRažotāja kods: TK31E60X,S1X(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 7,80

€ 3,90 Katrs (Paka ir 2) (bez PVN)

€ 9,44

€ 4,719 Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

2

Pieejams komplektos pa 2
2€ 7,80
4€ 15,60
6€ 23,40
8€ 31,20
10€ 28,50
12€ 34,20
14€ 39,90
16€ 45,60
18€ 51,30
20€ 56,00
22€ 61,60
24€ 67,20
26€ 72,80
28€ 78,40
30€ 84,00

€ 7,80

€ 3,90 Katrs (Paka ir 2) (bez PVN)

€ 9,44

€ 4,719 Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Noliktavas stāvoklis patreiz nav pieejams

2

Pieejams komplektos pa 2
2€ 7,80
4€ 15,60
6€ 23,40
8€ 31,20
10€ 28,50
12€ 34,20
14€ 39,90
16€ 45,60
18€ 51,30
20€ 56,00
22€ 61,60
24€ 67,20
26€ 72,80
28€ 78,40
30€ 84,00

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 3,90€ 7,80
10 - 18€ 2,85€ 5,70
20 - 48€ 2,80€ 5,60
50 - 98€ 2,70€ 5,40
100+€ 2,65€ 5,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more