P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

RS noliktavas nr.: 144-5260Ražotājs: ToshibaRažotāja kods: SSM3J334R,LF(T
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Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,183

Katrs (Paka ir 30) (bez PVN)

€ 0,221

Katrs (Paka ir 30) (Ieskaitot PVN)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

€ 0,183

Katrs (Paka ir 30) (bez PVN)

€ 0,221

Katrs (Paka ir 30) (Ieskaitot PVN)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
30 - 120€ 0,183€ 5,49
150+€ 0,174€ 5,22

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more