Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,183
Katrs (Paka ir 30) (bez PVN)
€ 0,221
Katrs (Paka ir 30) (Ieskaitot PVN)
30
€ 0,183
Katrs (Paka ir 30) (bez PVN)
€ 0,221
Katrs (Paka ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
30 - 120 | € 0,183 | € 5,49 |
150+ | € 0,174 | € 5,22 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Izcelsmes valsts
Japan
Produkta apraksts