Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,324
Katrs (Paka ir 25) (bez PVN)
€ 0,392
Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 0,324
Katrs (Paka ir 25) (bez PVN)
€ 0,392
Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 100 | € 0,324 | € 8,10 |
125 - 475 | € 0,15 | € 3,75 |
500 - 1225 | € 0,141 | € 3,52 |
1250+ | € 0,123 | € 3,08 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts