SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S

RS noliktavas nr.: 233-6854Ražotājs: onsemiRažotāja kods: NTH4L022N120M3S
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 15,10

€ 15,10 Katrs (bez PVN)

€ 18,27

€ 18,27 Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 15,10
2€ 30,20
3€ 45,30
4€ 60,40
5€ 75,50
6€ 90,60
7€ 105,70
8€ 120,80
9€ 135,90
10€ 151,00
11€ 166,10
12€ 181,20
13€ 196,30
14€ 211,40
15€ 226,50

€ 15,10

€ 15,10 Katrs (bez PVN)

€ 18,27

€ 18,27 Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 15,10
2€ 30,20
3€ 45,30
4€ 60,40
5€ 75,50
6€ 90,60
7€ 105,70
8€ 120,80
9€ 135,90
10€ 151,00
11€ 166,10
12€ 181,20
13€ 196,30
14€ 211,40
15€ 226,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more