Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115

RS noliktavas nr.: 792-0917Ražotājs: NexperiaRažotāja kods: BSS84AKS,115
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Dual P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,059

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,071

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115
Izvēlēties iepakojuma veidu

€ 0,059

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,071

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Dual P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more