Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,40
€ 0,036 Katrs (tiek piegadats Rulli) (bez PVN)
€ 6,53
€ 0,044 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
150
€ 5,40
€ 0,036 Katrs (tiek piegadats Rulli) (bez PVN)
€ 6,53
€ 0,044 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
150
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
150 - 725 | € 0,036 | € 0,90 |
750 - 1475 | € 0,035 | € 0,88 |
1500+ | € 0,032 | € 0,80 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts