Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Izcelsmes valsts
Korea, Republic Of
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,70
Katrs (Tubina ir 5) (bez PVN)
€ 2,057
Katrs (Tubina ir 5) (Ieskaitot PVN)
5
€ 1,70
Katrs (Tubina ir 5) (bez PVN)
€ 2,057
Katrs (Tubina ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
5 - 20 | € 1,70 | € 8,50 |
25 - 45 | € 1,50 | € 7,50 |
50 - 145 | € 1,30 | € 6,50 |
150 - 345 | € 1,20 | € 6,00 |
350+ | € 1,15 | € 5,75 |
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Izcelsmes valsts
Korea, Republic Of