N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH

RS noliktavas nr.: 871-4924Ražotājs: MagnaChipRažotāja kods: MDF18N50BTH
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Izcelsmes valsts

Korea, Republic Of

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,70

Katrs (Tubina ir 5) (bez PVN)

€ 2,057

Katrs (Tubina ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH

€ 1,70

Katrs (Tubina ir 5) (bez PVN)

€ 2,057

Katrs (Tubina ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
5 - 20€ 1,70€ 8,50
25 - 45€ 1,50€ 7,50
50 - 145€ 1,30€ 6,50
150 - 345€ 1,20€ 6,00
350+€ 1,15€ 5,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Izcelsmes valsts

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more