Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF

RS noliktavas nr.: 220-7481Ražotājs: InfineonRažotāja kods: IRFH3707TRPBF
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0124 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,14

Katrs (Paka ir 50) (bez PVN)

€ 0,169

Katrs (Paka ir 50) (Ieskaitot PVN)

Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF
Izvēlēties iepakojuma veidu

€ 0,14

Katrs (Paka ir 50) (bez PVN)

€ 0,169

Katrs (Paka ir 50) (Ieskaitot PVN)

Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0124 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more