Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Series
IRF7463
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Paka ir 10) (bez PVN)
€ 1,694
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 1,40
Katrs (Paka ir 10) (bez PVN)
€ 1,694
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Series
IRF7463
Forward Diode Voltage
1.3V