Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,889
Katrs (Paka ir 20) (bez PVN)
€ 1,076
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 0,889
Katrs (Paka ir 20) (bez PVN)
€ 1,076
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,889 | € 17,78 |
100 - 180 | € 0,694 | € 13,88 |
200 - 480 | € 0,65 | € 13,00 |
500 - 980 | € 0,604 | € 12,08 |
1000+ | € 0,56 | € 11,20 |
Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Izcelsmes valsts
China