N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

RS noliktavas nr.: 214-4396Ražotājs: InfineonRažotāja kods: IPD80R1K4CEATMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,485

Katrs (Paka ir 15) (bez PVN)

€ 0,587

Katrs (Paka ir 15) (Ieskaitot PVN)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Izvēlēties iepakojuma veidu

€ 0,485

Katrs (Paka ir 15) (bez PVN)

€ 0,587

Katrs (Paka ir 15) (Ieskaitot PVN)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more