SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Package Type
AG-EASY1B-2
Series
F4
Mounting Type
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 144,00
Katrs (bez PVN)
€ 174,24
Katrs (Ieskaitot PVN)
Standarts
1
€ 144,00
Katrs (bez PVN)
€ 174,24
Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 4 | € 144,00 |
| 5 - 9 | € 142,00 |
| 10 - 14 | € 139,00 |
| 15 - 19 | € 136,00 |
| 20+ | € 133,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Package Type
AG-EASY1B-2
Series
F4
Mounting Type
Chassis Mount
Maximum Drain Source Resistance
0.0225 Ω
Maximum Gate Threshold Voltage
5.55V
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products