N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1

RS noliktavas nr.: 911-4909Ražotājs: InfineonRažotāja kods: IPW60R045CPFKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

21.1mm

Izcelsmes valsts

Germany

Produkta apraksts

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 15,60

Katrs (Tubina ir 30) (bez PVN)

€ 18,876

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1

€ 15,60

Katrs (Tubina ir 30) (bez PVN)

€ 18,876

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
30 - 30€ 15,60€ 468,00
60+€ 14,80€ 444,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

21.1mm

Izcelsmes valsts

Germany

Produkta apraksts

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more