N-Channel MOSFET, 9.9 A, 650 V, 3-Pin DPAK Infineon IPD60R650CEAUMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
650 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
82 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,678
Katrs (Paka ir 10) (bez PVN)
€ 0,82
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,678
Katrs (Paka ir 10) (bez PVN)
€ 0,82
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 0,678 | € 6,78 |
| 50 - 490 | € 0,452 | € 4,52 |
| 500 - 990 | € 0,387 | € 3,87 |
| 1000 - 2490 | € 0,34 | € 3,40 |
| 2500+ | € 0,295 | € 2,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
650 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
82 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products