N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

RS noliktavas nr.: 133-9867Ražotājs: InfineonRažotāja kods: IPAW60R600CEXKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS CE

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

11.3mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

16.27mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,30

Katrs (Paka ir 5) (bez PVN)

€ 1,573

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1
Izvēlēties iepakojuma veidu

€ 1,30

Katrs (Paka ir 5) (bez PVN)

€ 1,573

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 1,30€ 6,50
50 - 120€ 1,15€ 5,75
125 - 245€ 1,10€ 5,50
250 - 495€ 1,00€ 5,00
500+€ 0,947€ 4,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS CE

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

11.3mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

16.27mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more