N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC057N08NS3 G

RS noliktavas nr.: 911-0765Ražotājs: InfineonRažotāja kods: BSC057N08NS3 G
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Singapore

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P.O.A.

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC057N08NS3 G

5000

Pieejams komplektos pa 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC057N08NS3 G
Noliktavas stāvoklis patreiz nav pieejams

5000

Pieejams komplektos pa 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Singapore

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more