Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 37,90
€ 0,379 Katrs (tiek piegadats Rulli) (bez PVN)
€ 45,86
€ 0,459 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 37,90
€ 0,379 Katrs (tiek piegadats Rulli) (bez PVN)
€ 45,86
€ 0,459 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 490 | € 0,379 | € 3,79 |
500 - 990 | € 0,344 | € 3,44 |
1000 - 2490 | € 0,323 | € 3,23 |
2500+ | € 0,303 | € 3,03 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Produkta apraksts