Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Transistor Material
Si
Height
1.02mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,488
Katrs (Paka ir 10) (bez PVN)
€ 0,59
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,488
Katrs (Paka ir 10) (bez PVN)
€ 0,59
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Transistor Material
Si
Height
1.02mm
Minimum Operating Temperature
-55 °C
Produkta apraksts