Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,423
Katrs (Rulli ir 3000) (bez PVN)
€ 0,512
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,423
Katrs (Rulli ir 3000) (bez PVN)
€ 0,512
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Izcelsmes valsts
Malaysia
Produkta apraksts