Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Width
1.5mm
Produkta apraksts
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,395
Katrs (Paka ir 10) (bez PVN)
€ 0,478
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 0,395
Katrs (Paka ir 10) (bez PVN)
€ 0,478
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,395 | € 3,95 |
100+ | € 0,248 | € 2,48 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Width
1.5mm
Produkta apraksts
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.