Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
Power MOSFET Modules, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,725
Katrs (Paka ir 5) (bez PVN)
€ 0,877
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,725
Katrs (Paka ir 5) (bez PVN)
€ 0,877
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts