Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
19 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,678
Katrs (Rulli ir 2500) (bez PVN)
€ 0,82
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,678
Katrs (Rulli ir 2500) (bez PVN)
€ 0,82
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
19 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts