STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

RS noliktavas nr.: 168-7474Ražotājs: STMicroelectronicsRažotāja kods: STW48NM60N
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

124 nC @ 10 V

Height

20.15mm

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 150,00

€ 5,00 Katrs (Tubina ir 30) (bez PVN)

€ 181,50

€ 6,05 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

€ 150,00

€ 5,00 Katrs (Tubina ir 30) (bez PVN)

€ 181,50

€ 6,05 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
30 - 30€ 5,00€ 150,00
60+€ 4,75€ 142,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

124 nC @ 10 V

Height

20.15mm

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more