Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 32,50
€ 3,25 Katrs (tiek piegadats Rulli) (bez PVN)
€ 39,32
€ 3,93 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 32,50
€ 3,25 Katrs (tiek piegadats Rulli) (bez PVN)
€ 39,32
€ 3,93 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
10 - 99 | € 3,25 |
100 - 499 | € 2,90 |
500 - 999 | € 2,55 |
1000+ | € 2,20 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.75mm
Maximum Operating Temperature
+150 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts