STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E

RS noliktavas nr.: 829-0627PRažotājs: STMicroelectronicsRažotāja kods: PD55015-E
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.6mm

Maximum Operating Temperature

+165 °C

Height

3.6mm

Typical Power Gain

14 dB

Produkta apraksts

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 17,40

€ 17,40 Katrs (tiek piegadats Tubina) (bez PVN)

€ 21,05

€ 21,05 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E
Izvēlēties iepakojuma veidu

€ 17,40

€ 17,40 Katrs (tiek piegadats Tubina) (bez PVN)

€ 21,05

€ 21,05 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E
Noliktavas stāvoklis patreiz nav pieejams
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.6mm

Maximum Operating Temperature

+165 °C

Height

3.6mm

Typical Power Gain

14 dB

Produkta apraksts

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more