Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Izcelsmes valsts
Thailand
Produkta apraksts
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 8,48
€ 0,565 Katrs (Paka ir 15) (bez PVN)
€ 10,26
€ 0,684 Katrs (Paka ir 15) (Ieskaitot PVN)
15
€ 8,48
€ 0,565 Katrs (Paka ir 15) (bez PVN)
€ 10,26
€ 0,684 Katrs (Paka ir 15) (Ieskaitot PVN)
15
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
15 - 360 | € 0,565 | € 8,48 |
375 - 735 | € 0,494 | € 7,41 |
750 - 1485 | € 0,483 | € 7,24 |
1500 - 2985 | € 0,469 | € 7,04 |
3000+ | € 0,459 | € 6,88 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Izcelsmes valsts
Thailand
Produkta apraksts