ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR

RS noliktavas nr.: 826-7816Ražotājs: ROHMRažotāja kods: RVQ040N05TR
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

0.95mm

Izcelsmes valsts

Thailand

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,48

€ 0,565 Katrs (Paka ir 15) (bez PVN)

€ 10,26

€ 0,684 Katrs (Paka ir 15) (Ieskaitot PVN)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR

€ 8,48

€ 0,565 Katrs (Paka ir 15) (bez PVN)

€ 10,26

€ 0,684 Katrs (Paka ir 15) (Ieskaitot PVN)

ROHM N-Channel MOSFET, 4 A, 45 V, 6-Pin TSMT RVQ040N05TR
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
15 - 360€ 0,565€ 8,48
375 - 735€ 0,494€ 7,41
750 - 1485€ 0,483€ 7,24
1500 - 2985€ 0,469€ 7,04
3000+€ 0,459€ 6,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-21 V, +21 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.8mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

0.95mm

Izcelsmes valsts

Thailand

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more