Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,552
Katrs (Tubina ir 50) (bez PVN)
€ 0,668
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,552
Katrs (Tubina ir 50) (bez PVN)
€ 0,668
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,552 | € 27,60 |
100 - 450 | € 0,41 | € 20,50 |
500 - 950 | € 0,319 | € 15,95 |
1000+ | € 0,275 | € 13,75 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.