Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 6,00
Katrs (Paka ir 5) (bez PVN)
€ 7,26
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 6,00
Katrs (Paka ir 5) (bez PVN)
€ 7,26
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 6,00 | € 30,00 |
10 - 95 | € 5,10 | € 25,50 |
100 - 245 | € 4,10 | € 20,50 |
250 - 495 | € 3,85 | € 19,25 |
500+ | € 3,60 | € 18,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm