Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

RS noliktavas nr.: 184-1064Ražotājs: onsemiRažotāja kods: NTJD4401NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

910 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-88

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

550 mW

Maximum Gate Source Voltage

±12 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V

Length

2.2mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,099

Katrs (Rulli ir 3000) (bez PVN)

€ 0,12

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G

€ 0,099

Katrs (Rulli ir 3000) (bez PVN)

€ 0,12

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 onsemi NTJD4401NT1G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

910 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-88

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

550 mW

Maximum Gate Source Voltage

±12 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V

Length

2.2mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more