onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1

RS noliktavas nr.: 202-5701PRažotājs: onsemiRažotāja kods: NTH4L080N120SC1
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 12,20

€ 6,10 Katrs (tiek piegadats Tubina) (bez PVN)

€ 14,76

€ 7,381 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Penālis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 2.

Ražošana -

Pieejams komplektos pa 2.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

2

Pieejams komplektos pa 2
2€ 12,20
4€ 24,40
6€ 36,60
8€ 48,80
10€ 61,00
12€ 73,20
14€ 85,40
16€ 97,60
18€ 109,80
20€ 122,00
22€ 134,20
24€ 146,40
26€ 158,60
28€ 170,80
30€ 183,00

€ 12,20

€ 6,10 Katrs (tiek piegadats Tubina) (bez PVN)

€ 14,76

€ 7,381 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Penālis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 2.

Ražošana -

Pieejams komplektos pa 2.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

2

Pieejams komplektos pa 2
2€ 12,20
4€ 24,40
6€ 36,60
8€ 48,80
10€ 61,00
12€ 73,20
14€ 85,40
16€ 97,60
18€ 109,80
20€ 122,00
22€ 134,20
24€ 146,40
26€ 158,60
28€ 170,80
30€ 183,00

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more