onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 146-2047Ražotājs: onsemiRažotāja kods: FGH60N60SMD-F085
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Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Produkta apraksts

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,40

Katrs (Tubina ir 30) (bez PVN)

€ 7,744

Katrs (Tubina ir 30) (Ieskaitot PVN)

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

€ 6,40

Katrs (Tubina ir 30) (bez PVN)

€ 7,744

Katrs (Tubina ir 30) (Ieskaitot PVN)

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Produkta apraksts

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more