Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,039
Katrs (Paka ir 250) (bez PVN)
€ 0,047
Katrs (Paka ir 250) (Ieskaitot PVN)
Standarts
250
€ 0,039
Katrs (Paka ir 250) (bez PVN)
€ 0,047
Katrs (Paka ir 250) (Ieskaitot PVN)
Standarts
250
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
250 - 750 | € 0,039 | € 9,75 |
1000 - 2750 | € 0,028 | € 7,00 |
3000 - 8750 | € 0,021 | € 5,25 |
9000 - 23750 | € 0,019 | € 4,75 |
24000+ | € 0,017 | € 4,25 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China