Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V dc
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 2.64 x 1.11mm
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,013
Katrs (Rulli ir 10000) (bez PVN)
€ 0,016
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
€ 0,013
Katrs (Rulli ir 10000) (bez PVN)
€ 0,016
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V dc
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 2.64 x 1.11mm
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.