Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
10 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,10
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,121
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
2000
€ 0,10
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,121
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
2000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
2000 - 2000 | € 0,10 | € 200,00 |
4000 - 8000 | € 0,098 | € 196,00 |
10000 - 14000 | € 0,093 | € 186,00 |
16000 - 18000 | € 0,09 | € 180,00 |
20000+ | € 0,089 | € 178,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
10 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm