Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
235 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4+Tab
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
128 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Height
1.05mm
Series
NTMFS5C426N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,50
Katrs (Paka ir 5) (bez PVN)
€ 3,025
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,50
Katrs (Paka ir 5) (bez PVN)
€ 3,025
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 95 | € 2,50 | € 12,50 |
100 - 495 | € 1,60 | € 8,00 |
500 - 995 | € 1,40 | € 7,00 |
1000 - 1495 | € 1,15 | € 5,75 |
1500+ | € 1,10 | € 5,50 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
235 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4+Tab
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
128 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Height
1.05mm
Series
NTMFS5C426N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V