Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Paka ir 10) (bez PVN)
€ 3,328
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 2,75
Katrs (Paka ir 10) (bez PVN)
€ 3,328
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 2,75 | € 27,50 |
100 - 490 | € 2,30 | € 23,00 |
500 - 990 | € 2,10 | € 21,00 |
1000 - 1490 | € 1,80 | € 18,00 |
1500+ | € 1,70 | € 17,00 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Produkta apraksts