Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,293
Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 0,355
Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
50
€ 0,293
Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 0,355
Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Maiss |
---|---|---|
50 - 450 | € 0,293 | € 14,65 |
500+ | € 0,128 | € 6,40 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.