NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,364
Katrs (Paka ir 10) (bez PVN)
€ 0,44
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 0,364
Katrs (Paka ir 10) (bez PVN)
€ 0,44
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 0,364 | € 3,64 |
| 100 - 240 | € 0,287 | € 2,87 |
| 250 - 990 | € 0,253 | € 2,53 |
| 1000+ | € 0,204 | € 2,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products