Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
85 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.46mm
Maximum Operating Temperature
+125 °C
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,95
Katrs (Tubina ir 30) (bez PVN)
€ 5,99
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 4,95
Katrs (Tubina ir 30) (bez PVN)
€ 5,99
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
85 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.46mm
Maximum Operating Temperature
+125 °C
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.