P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

RS noliktavas nr.: 725-9252Ražotājs: InfineonRažotāja kods: IRF9335PBF
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Width

3.99mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

€ 4,71

€ 0,471 Katrs (Paka ir 10) (bez PVN)

€ 5,70

€ 0,57 Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF
Izvēlēties iepakojuma veidu

€ 4,71

€ 0,471 Katrs (Paka ir 10) (bez PVN)

€ 5,70

€ 0,57 Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 0,471€ 4,71
100 - 190€ 0,323€ 3,23
200+€ 0,307€ 3,07

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Width

3.99mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt