Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
IPP075N15N3 G
Package Type
TO-220
Series
OptiMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.57mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
11.17mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,70
Katrs (Tubina ir 50) (bez PVN)
€ 5,687
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 4,70
Katrs (Tubina ir 50) (bez PVN)
€ 5,687
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 4,70 | € 235,00 |
100 - 200 | € 4,50 | € 225,00 |
250+ | € 4,05 | € 202,50 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
IPP075N15N3 G
Package Type
TO-220
Series
OptiMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.57mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
11.17mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V