Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Height
4.57mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,55
Katrs (Rulli ir 1000) (bez PVN)
€ 4,296
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 3,55
Katrs (Rulli ir 1000) (bez PVN)
€ 4,296
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Height
4.57mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.