Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
100 V
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
1.1mm
Series
BSZ097N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,896
Katrs (Rulli ir 5000) (bez PVN)
€ 1,084
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 0,896
Katrs (Rulli ir 5000) (bez PVN)
€ 1,084
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
100 V
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
1.1mm
Series
BSZ097N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V