Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 1mm
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,245
Katrs (Paka ir 100) (bez PVN)
€ 0,296
Katrs (Paka ir 100) (Ieskaitot PVN)
100
€ 0,245
Katrs (Paka ir 100) (bez PVN)
€ 0,296
Katrs (Paka ir 100) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
100 - 100 | € 0,245 | € 24,50 |
200 - 400 | € 0,184 | € 18,40 |
500 - 900 | € 0,172 | € 17,20 |
1000 - 2400 | € 0,159 | € 15,90 |
2500+ | € 0,147 | € 14,70 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 1mm
Produkta apraksts