Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
255 W
Package Type
P 626
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensions
87 x 50.2 x 12mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+110 °C
Produkta apraksts
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 124,00
Katrs (bez PVN)
€ 150,04
Katrs (Ieskaitot PVN)
1
€ 124,00
Katrs (bez PVN)
€ 150,04
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 124,00 |
5 - 9 | € 116,00 |
10 - 24 | € 113,00 |
25+ | € 110,00 |
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
255 W
Package Type
P 626
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensions
87 x 50.2 x 12mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+110 °C
Produkta apraksts
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.