Tehniskie dokumenti
Specifikācija
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+125 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
3 V
Number of Bits per Word
8bit
Produkta apraksts
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,65
Katrs (Paka ir 2) (bez PVN)
€ 5,626
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 4,65
Katrs (Paka ir 2) (bez PVN)
€ 5,626
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 4,65 | € 9,30 |
10 - 48 | € 4,15 | € 8,30 |
50 - 98 | € 4,00 | € 8,00 |
100 - 498 | € 3,60 | € 7,20 |
500+ | € 3,45 | € 6,90 |
Tehniskie dokumenti
Specifikācija
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+125 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
3 V
Number of Bits per Word
8bit
Produkta apraksts
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.