BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67

RS noliktavas nr.: 814-1005Ražotājs: BALLUFFRažotāja kods: BES M08MI-PSC15B-S49GIMPA: 0
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Tehniskie dokumenti

Specifikācija

Body Style

Barrel

Reverse Polarity Protection

Yes

Short Circuit Overload Protection

Yes

For Use With HMI

X2

Shielding

Shielded

Maximum Switching Frequency

1kHz

Thread Size

M8 x 1

Maximum dc Voltage

30V

Minimum Operating Temperature

-25°C

Maximum Operating Temperature

+70°C

IP Rating

IP67

Mounting Type

Flush

Housing Material

CuZn

Switching Current

200 mA

Detection Range

1.5 mm

Brand

BALLUFF

Output Type

PNP

Terminal Type

3-Pin M8 Connector

Length

60mm

Supply Voltage

12 → 30 V dc

Izcelsmes valsts

Hungary

Produkta apraksts

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 50,36

Katrs (bez PVN)

€ 60,93

Katrs (Ieskaitot PVN)

BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67

€ 50,36

Katrs (bez PVN)

€ 60,93

Katrs (Ieskaitot PVN)

BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67
Noliktavas stāvoklis patreiz nav pieejams

Tehniskie dokumenti

Specifikācija

Body Style

Barrel

Reverse Polarity Protection

Yes

Short Circuit Overload Protection

Yes

For Use With HMI

X2

Shielding

Shielded

Maximum Switching Frequency

1kHz

Thread Size

M8 x 1

Maximum dc Voltage

30V

Minimum Operating Temperature

-25°C

Maximum Operating Temperature

+70°C

IP Rating

IP67

Mounting Type

Flush

Housing Material

CuZn

Switching Current

200 mA

Detection Range

1.5 mm

Brand

BALLUFF

Output Type

PNP

Terminal Type

3-Pin M8 Connector

Length

60mm

Supply Voltage

12 → 30 V dc

Izcelsmes valsts

Hungary

Produkta apraksts

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.